Method and apparatus to characterize photolithography lens quality

ABSTRACT

Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.

CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.13/365,733, filed on Feb. 3, 2012, the entirety of which is herebyincorporated by reference.

TECHNICAL FIELD

The present disclosure relates generally to a semiconductor fabrication,and more particularly, to a method and apparatus to characterize thequality of a photolithography lens.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs where each generation has smaller and more complexcircuits than the previous generation. However, these advances haveincreased the complexity of processing and manufacturing ICs and, forthese advances to be realized, similar developments in IC processing andmanufacturing are needed. In the course of integrated circuit evolution,functional density (i.e., the number of interconnected devices per chiparea) has generally increased while geometry size (i.e., the smallestcomponent (or line) that can be created using a fabrication process) hasdecreased.

The need for small geometry sizes places stricter demands on aphotolithography process. In particular, the alignment between variouslayers in the semiconductor device (also referred to as overlay) needsto be precise and accurate. In other words, it is desirable to reduceoverlay errors. Overlay marks (overlay patterns) may be used to measurethe overlay error on wafers patterned by a photolithography tool. Thesize of the measured overlay error corresponds to the quality of thelens in the photolithography tool used to pattern the wafer. As geometrysizes become increasingly small, existing overlay marks and existingmethods to characterize the quality of photolithography tool lenses maynot be sufficient. Thus, lens quality assessments may be skewed, whichmay lead to more chip failures.

Therefore, while existing overlay marks and lens qualitycharacterization methods have been generally adequate for their intendedpurposes, they have not been entirely satisfactory in every aspect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a functional block diagram of a semiconductor fabricationsystem that embodies various aspects of the present disclosure.

FIG. 2 is a flowchart of a method for characterizing the quality of alens in a photolithography tool.

FIG. 3 is a one example of an overlay pattern according to variousaspects of the present disclosure.

FIG. 4 illustrates eight different example overlay patterns according tovarious aspects of the present disclosure.

FIG. 5 illustrates example results of a photolithography simulation ofthe exposure of different overlay patterns by photolithography lensesexhibiting different types of aberration patterns.

FIG. 6 is an Illustration of a photomask having the overlay patternshown in FIG. 3 thereon.

FIG. 7 illustrates a wafer that has been exposed by a photolithographytool using the photomask shown in FIG. 6.

FIG. 8 illustrates an example overlay error of an overlay pattern formedon a wafer.

FIG. 9 is a flow-chart of a method of processing relative patternplacement error data collected by an overlay metrology tool.

FIG. 10 is an example average field having 208 average pattern placementerror vectors.

FIG. 11 illustrates an example line graph depicting the values ofaverage x-components of pattern placement error vectors.

FIG. 12 illustrates an example line graph depicting the values ofaverage y-components of pattern placement error vectors.

FIG. 13 illustrates a flow chart of a method for calculating the qualityof a lens in a photolithography tool in terms of Zernike coefficients.

FIG. 14 illustrates a system of Zernike polynomial equations that may beused to calculate the quality of a photolithography lens in terms ofZernike coefficients.

FIG. 15 is an example line graph depicting the values of Z₇ Zernikecoefficients associated with 13 exposure slit positions.

FIG. 16 is an example line graph depicting the values of Z₁₀ Zernikecoefficients associated with 13 exposure slit positions.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Moreover,the formation of a first feature over or on a second feature in thedescription that follows may include embodiments in which the first andsecond features are formed in direct contact, and may also includeembodiments in which additional features may be formed interposing thefirst and second features, such that the first and second features maynot be in direct contact. Various features may be arbitrarily drawn indifferent scales for the sake of simplicity and clarity.

FIG. 1 is a functional block diagram of a semiconductor fabricationsystem 100 that embodies various aspects of the present disclosure. Thesystem 100 comprises a plurality of semiconductor fabrication componentsthat are connected by a communications network 102. The network 102 maybe a single network or may be a variety of different networks, such asan intranet and the Internet, and may include both wired and wirelesscommunication channels. Each component may interact with othercomponents and may provide services to and/or receive services from theother entities. Further, the network-connected components may be alllocated in a single fabrication location or may be geographicallydispersed. In the illustrated embodiment the system 100 includes aphotolithography tool 104, a photolithography simulation tool 106, anoverlay metrology tool 108, a data processing tool 110, and a database112. It is understood that the system 100 may further comprise variousother processing tools (e.g., etching tools, deposition tools, chemicalmechanical polishing (CMP) tools, furnaces, etc.), metrology equipment(e.g., an after-etching-inspection (AEI) metrology tool), andcontrollers (e.g., an Advanced Process Control (APC) system) thatperform other stages of semiconductor fabrication but are notillustrated for the sake of simplicity and clarity.

In the illustrated embodiment, the photolithography tool 104 is aprojection-based scanner of a type known in the art. Generally, thephotolithography tool 104 projects radiation onto a photosensitive layer(e.g., photoresist) on a wafer to create patterns that form variousfeatures of an integrated circuit. In more detail, the photolithographytool 104 outputs small-wavelength light through a lens that directs thelight through an exposure slit and onto a photomask that containstransparent and opaque areas that form the pattern sought to be createdon a wafer. After the light is patterned by the photomask, it is reducedand projected onto one exposure field out of many on the wafer. Notably,the exposure slit is as wide as the photomask but is only a fraction ofits length, so the light emanating from the slit must be “scanned”across the photomask to expose an entire field on the wafer. After theentire field has been exposed (i.e. scanned), the wafer and/or photomaskis stepped to the next field on the wafer, so that the photomask patternmay be exposed again on the next field. In alternative embodiments, thephotolithography tool 104 may operate in different manners.

To maintain high semiconductor fabrication standards, it may benecessary to monitor the quality of the lenses in photolithographytools, such as photolithography tool 104. The quality of a lens inphotolithography tool 104 may be characterized by its cross-slitaberration—i.e., lens imperfection as measured at a plurality oflocations along the length of the exposure slit. As described in moredetail below, lens aberration/imperfection may be quantified by one ormore Zernike coefficients. Different Zernike coefficients correspond todifferent types of aberration patterns (e.g., coma aberration, 3-foiland 5-foil aberration).

Referring again to FIG. 1, the other components shown in system 100assist in determining the quality of the lens in the photolithographytool 104. For instance, the photolithography simulation tool 106 isoperable to calculate the sensitivity of different overlay patterns todifferent types of aberration. As described in more detail inassociation with FIG. 14, sensitivity coefficients are used in thecalculation of Zernike coefficients. In the illustrated embodiment, thesimulation tool 106 may comprise a computer that may be a conventional,commercially-available computer, or any other suitable computerhardware. The hardware of the simulation tool 106 may include aprocessor and a non-transitory memory. The memory storescomputer-readable instructions that are executed by the processor tosimulate photolithography processes. In some embodiments, the simulationtool 106 may be a software module executing on a computing hardwareresource.

The overlay metrology tool 108 is operable to measure characteristics ofpatterns on wafers exposed by the photolithography tool 104. Forinstance, the overlay metrology tool 108 may be operable to measure thedistance between features of patterns exposed on a wafer. When used inconjunction with an overlay pattern exposed on a wafer by a monitorphotomask (i.e., a photomask used for testing purposes), tool 108 maymeasure overlay error, which may be used to quantify lens quality. Asshown in FIG. 1, the system 100 also includes the data processing tool110. In the illustrated embodiment, the data processing tool is acomputer including a processor and non-transitory memory and is operableto process, analyze, and format overlay error data collected by theoverlay metrology tool 108. In some embodiments, the simulation tool 106and data processing tool 110 may be software modules executing on ashared computing resource.

As mentioned above, the system 100 includes the database 112, which maybe of a type known in the art, In the illustrated embodiment thedatabase 112 is operable to store lens aberration/quality data of thephotolithography tool 104. Cross-slit aberration, and thus quality, of alens may drill over time and so it may be useful to compare historicalaberration data for a lens against recently collected aberration data.

Referring now to FIG. 2, illustrated is a flowchart of a method 120 forcharacterizing the quality of a lens in photolithography tool 104. Themethod 120 in FIG. 2 is a high-level overview and details associatedwith each block in the method will be described in association with thesubsequent figures in the present disclosure.

The method 120 begins at block 200 where a plurality of differentoverlay patterns are selected. Overlay patterns (sometimes referred toas overlay marks) may be used to test the exposure accuracy of aphotolithography tool. For instance, a wafer may be exposed using amonitor photomask having an overlay pattern instead of a circuit designfor quality assessment purposes. The pattern exposed on the wafer maythen be measured to determine the overlay error or relative patternplacement error (PPE) associated with the lens of the photolithographytool used to perform the exposure. In this regard, FIG. 3 is a oneexample of an overlay pattern 202. The overlay pattern 202 is known as abox-in-box pattern. Specifically, the overlay pattern 202 includes anouter box 204 that is formed by a single opaque line. The overlaypattern 202 further includes an inner box 206 that is formed of twovertically-oriented gratings and two horizontally-oriented gratings.Each grating includes a plurality of spaced opaque lines ofsubstantially the same width that are equidistant from each other. Inone embodiment, the gratings of the inner box 206 may have a line widthof 500 nm and pitch of 1000 nm, but, in alternative embodiments, thegratings may have different line widths and/or pitches. As shown in theillustrated embodiment, the inner box 206 has a different pitch than theouter box 204. Notably, the pattern that forms inner box 206 may have adifferent sensitivity to lens aberration than the pattern that formsouter box 204 due to the difference in the pitch of the patterns. Inalternative embodiments, the outer box 204 may include a plurality ofparallel opaque lines of substantially the same width (i.e. a gratingstructure). In further alternative embodiments, an inner box may beformed of a single opaque line and the outer box may be formed of aplurality of gratings. In these alternative embodiments, the features ofthe outer box 204 would have a different pitch than the features of theinner box 206. Additionally, as indicated by the circle 208, the centerof the inner box 206 is aligned with the center of the outer box 204.That is, the inner box 206 and outer box 204 have the same center point.When the pattern 202 is transferred onto a wafer, however, the centerpoint of the exposed inner box may “shift” with respect to the centerpoint of the exposed outer box. For the purposes of the presentdisclosure, the displacement between the centers is defined as theoverlay error or relative pattern placement error (PPE).

As mentioned above, at block 200 in method 120, a plurality of differentoverlay patterns are selected. FIG. 4 illustrates eight such overlaypatterns that may be selected. As shown, each overlay pattern 202, 210,212, 214, 216, 218, 220, and 222 includes multiple features havingdifferent attributes (e.g., line width, pitch, etc). Like overlaypattern 202 of FIG. 3, overlay patterns 210, 212, and 214 are box-in-boxpatterns. And, in each pattern 210, 212, and 214, the inner box has adifferent pitch than the outer box. Further, overlay patterns 216, 218,220, and 222 include alternating bar features. For example, pattern 220includes a bar 224 that is formed by an unbroken opaque line and a bar226 that is formed by a grating having a plurality of spaced opaquelines of substantially the same width that are equidistant from eachother. The bar 224 has a different pitch than the bar 226. All of thebars similar to bar 224 form a first pattern feature centered aroundcenter 228. Similarly, the bars similar to bar 226 form a second patternfeature that is also centered around center 228. That is, the first andsecond pattern features share a center point. The patterns 216, 218, and222, also include two different bars types with two different pitches.As will be described in more detail below, the method 120 may utilizethe eight different overlay patterns shown in FIG. 4 to accuratelycharacterize the quality of the lens in photolithography tool 104. It isunderstood that the test patterns shown in FIG. 4 are simply examples,and, in alternative embodiments, different patterns having differentfeatures may be selected, and a different number of patterns may beselected.

Referring back to FIG. 2, the method 120 proceeds to block 300 where aphotolithography simulation is performed with photolithographysimulation tool 106 to determine sensitivity coefficients for theoverlay patterns selected in block 200. In general, an overlay pattern'ssensitivity coefficient describes that pattern's sensitivity to lensaberration. More specifically, as used in the present disclosure, apattern's sensitivity coefficient is defined as the amount of patternplacement error (in nanometers) produced by one nanometer of lensaberration. Further, a pattern may have a different sensitivitycoefficient for different aberration patterns, as represented by theZernike coefficients. The photolithography simulation tool 106 isoperable to simulate the exposure of different overly patterns byphotolithography lenses exhibiting different types of aberrationpatterns. In that regard, FIG. 5 illustrates example simulation resultsin a bar graph 302 for twelve different patterns 304 and eight differentZernike aberration patterns 306. As shown in FIG. 5, sensitivitycoefficients 308 were generated by simulation for each pattern 304 usingeach of eight aberration patterns 306. For example, the example bargraph 302 shows that a pattern with a pitch of 1000 nm and a line widthof 500 nm has a sensitivity coefficient of −0.5 for the left-rightimbalance aberration pattern represented by the Zernike coefficient Z₇.In the block 300 of method 120, the photolithography simulation tool 106generates sensitivity coefficients associated with the Zernikecoefficients Z₇, Z₁₀, Z₁₄, Z₁₉, Z₂₃, Z₂₆, Z₃₀, and Z₃₄, for each of theeight overlay patterns shown in FIG. 4. The types of aberrationrepresented by these Zernike coefficients are those that affect thetypes of overlay patterns shown in FIG. 4. It is understood that thesimulation results shown in bar graph 302 are just an example. Inalternative embodiments that utilize different overlay patterns,sensitivity coefficients may be generated using different aberrationpatterns (i.e., Zernike coefficients). Further, a pattern's sensitivitycoefficient may be defined in an alternate manner.

After the sensitivity coefficients have been generated for the eightoverlay patterns, method 120 proceeds to block 400 where a monitorphotomask is created for each of the overlay patterns. FIG. 6 is anillustration of a photomask 402 having the overlay pattern 202 shown inFIG. 3 thereon. Specifically, on photomask 402, the pattern 202 isrepeated 208 times in a grid having 13 columns and 16 rows. As mentionedabove, exposure slit in the photolithography tool 104 is as wide as aphotomask; thus, when the photomask 402 is aligned beneath the exposureslit, light will be directed through a row of 13 overlay patterns. And,when the photomask is scanned from top to bottom under the exposureslit, 16 rows of 13 patterns will be sequentially formed in an exposurefield on a wafer. In the illustrated embodiment of method 120, each ofthe eight photomasks will have a 13 by 16 grid of the same pattern,where each photomask is associated with a different one of the patternsshown in FIG. 4. It is understood that in alternative embodiments, thephotomask 402 may be configured in a different manner. For instance, apattern may by repeated a different number of times on the photomask, ormultiple different patterns may be formed on a single photomask.

Referring back to FIG. 2, the method 120 next proceeds to block 500where the photolithography tool 104 is used to expose eight wafers,where each wafer is exposed with a different photomask having adifferent pattern. As a result, each overlay patient will be formed on arespective one of the eight wafers. For example, FIG. 7 illustrates awafer 502 that has been exposed by photolithography tool 104 with thephotomask 402 shown in FIG. 6. Specifically, the photolithography tool104 projects light through the exposure slit and, as photomask 402 isscanned beneath the slit, rows of 13 patterns are simultaneously createdin a field on the wafer 502. Accordingly, each exposed field on wafer502, such as a field 504, contains the pattern on photomask 402. Asshown in FIG. 7, twenty-five fields of the wafer 502 are exposed withthe photomask 402. That is, after exposure, each field includes 208copies of the overlay pattern 202 and the wafer includes 5200 copies ofthe pattern 202 in total. Each of the eight wafers are similarlyexposed. In alternative embodiments, a different number of fields on awafer may be exposed, multiple patterns may be exposed on a singlewafer, and a different number of wafers may be exposed.

After the eight overlay patterns have been exposed onto eight wafers,the method 120 of FIG. 2 proceeds to block 600 where the overlaymetrology tool 108 is used to measure the overlay errors of the patternsexposed on the eight wafers. FIG. 8 illustrates an example overlay errorof one of the copies of pattern 202 exposed on the wafer 502. As shown,an exposed overlay pattern 602 includes an outer box 604 and an innerbox 606. The individual structures of the exposed outer box 604 and theexposed inner box 606 are substantially the same as the outer box 204and inner box 206 of overlay pattern 202. However, when the pattern onthe photomask is exposed onto the wafer, the inner box is displaced someamount from its intended position (i.e., its pattern placement error)and the outer box is displaced a different amount from its intendedposition. In some instances, the pattern placement errors for the twofeatures may be different because of the difference in pitch between thetwo features. Thus, when the displacement amounts are different for thetwo features, as is the case in the exposed pattern 602 in FIG. 8, theexposed inner box 606 looks to have shifted relative to the exposedouter box 604 when compared to the boxes' intended relative placement(i.e., the boxes have the same center point as shown pattern 202 of FIG.3). In the illustrated embodiment, this relative shift is called therelative pattern placement error (PPE) and is measured by a distance anddirection between a center 608 of the outer box 604 and a center 610 ofthe inner box 606. Typically, relative PPE is quantified by a vector.Here, the exposed pattern 602 has a PPE vector 612 that indicates boththe direction and distance of the relative PPE between the two centers.The PPE vector 612 has an x-component that represents the horizontalcomponent of the relative PPE and a y-component that represents thevertical component of the relative PPE. Relative pattern placement erroris measured in the same way for alternating bar patterns, such as thepatterns 216, 218, 220, and 222 shown in FIG. 4. That is, the positionof the center of one alternating bar pattern feature is compared to theposition of the center of the other alternating bar pattern feature. Therelative direction and distance between them is represented by a PPEvector. As mentioned above, the overlay metrology tool 108 is used tomeasure the relative PPE of every overlay pattern on each wafer. Inother words, in the illustrated embodiment, the tool 108 determines 208relative pattern placement errors for each field on a wafer (i.e. onefor each individual pattern) and 5200 relative pattern placement errorsfor each wafer. Each of the eight wafers are inspected by the overlaymetrology tool 108 in block 600 of method 120. It is understood that inalternative embodiments, the overlay errors of the patterns on theexposed wafers may be measured and quantified in a different manner. Forinstance, the distance between different portions of the box-in-box oralternating bar patterns may be measured by an overlay metrology tool.

Referring back to FIG. 2, the method 120 next proceeds to block 700where the data processing tool 110 processes and analyzes the relativePPE data collected by the overlay metrology tool 108 in block 600. Inthat regard, FIG. 9 is a flow-chart of a method 702 of processingrelative PPE data collected by the overlay metrology tool 108 in block600. The method 702 begins at block 704 where a first wafer is selectout of the eight exposed wafers. The method 702 then proceeds to block706 where the data processing tool 110 calculates the PPE vectors foreach individual pattern on the wafer (i.e., 208 PPE vectors per fieldand 5200 PPE vectors per wafer). Then, in block 708, the processing tool110 calculates an “average” field on the selected wafer using the PPEvector data front all 25 fields on the wafer. Specifically, for each ofthe 208 individual patterns in a field, the processing tool 110calculates the average PPE vector associated with that pattern acrossthe 25 fields. FIG. 10 is an example average field 710. The averagefield 710 includes 208 PPE vectors that each represent an average PPEvector associated with an individual pattern. For instance, a PPE vector712 is the average PPE vector for the overlay pattern in the topleft-most position of each field on a wafer. Calculating an averagefield reduces the impact of any metrology errors introduced by theoverlay metrology tool 108. The method 702 then proceeds to block 714where the processing tool 110 decomposes the PPE vectors in the“average” field of the selected wafer into their x-components andy-components (see FIG. 8). Next, in block 716, the processing tool 110utilizes the x-component data to calculate an average x-component foreach of the 13 columns of PPE vectors in the average field 710. Asmentioned above, the exposure slit in photolithography toot 104 is aswide as the pattern on an overlay photomask and a photomask's pattern isprojected onto one field on a wafer; thus, each column in the averagefield 710 represents a specific position along the length of theexposure slit. Therefore, the 13 average x-components of PPE vectorsrepresent the amount of horizontal relative PPE associated with 13positions along the exposure slit. FIG. 11 illustrates an example linegraph 718 depicting these 13 average x-components of PPE vectorscalculated by the processing tool 110 in block 716. The y-axis of thegraph 718 represents the size of the x-component of a PPE vector (innm), and the x-axis represents positions along the length of theexposure slit (in cm). For instance, at a position −125 cm to the leftof center on the exposure slit, the lens of the photolithography tool104 produces, on average, 0.4 nm of horizontal relative PPE for thepattern on the selected wafer. In this manner, “cross-slit” lensaberration may be quantified. The method 702 then proceeds to block 720where the processing tool 110 utilizes the PPE vector y-component datato calculate an average y-component for each of the 13 columns of PPEvectors in the “average” field 710. This is performed in the same manneras the calculation of the average x-components in block 716. FIG. 12illustrates an example line graph 722 depicting 13 average y-componentsof PPE vectors calculated by the processing tool 110 in block 720. Thex-axis of line graph 722 again represents positions along the exposureslit, but the y-axis represents the size of the y-component of a PPEvector.

The method 702 then proceeds to decision block 724 where it isdetermined whether overlay error data associated with additional wafersneed to be processed. If so, another wafer is selected in block 726 andthe method returns of block 706. When the overlay error data for dataall eight wafers has been processed, the processing tool will haveproduced eight sets of cross-slit PPE vector x-component data and eightsets cross-slit PPE vector y-component data. In some embodiments, thesesets of data may be plotted on line graphs similar to the line graphs718 and 722 for analysis purposes. After overlay error data processingfor all eight exposed wafers has been completed, the method 702 iscomplete and thus block 700 in method 120 of FIG. 2 is complete. It isunderstood that the overlay error data collected by the overlaymetrology tool may be processed in a number of different ways, and themethod described in the illustrated embodiment is simply an example.Further, in some embodiments, the method 702 may include additionalsteps and/or the current steps may be performed in a different orderdepending on the manner in which the overlay error data is processed.

Next, the method 120 proceeds to block 800 where the overlay error dataprocessed in block 700 is used to calculate the quality of the lens inthe photolithography lens in terms of Zernike coefficients. Typically, alens with a large Zernike coefficient is more imperfect than a lens witha small Zernike coefficient. In other words, a Zernike coefficientassociated with a lens is a quality indicator for that lens. In theillustrated embodiment, the data processing tool 110 may carry out thesecalculations. In that regard. FIG. 13 Illustrates a flow chart of amethod 802 for calculating the quality of the lens in thephotolithography tool in terms of Zernike coefficients as carried out inblock 800 of method 120. Method 802 begins at block 804 where a firstslit position along the length of the exposure slit is chosen. Asmentioned above, relative PPE data is collected at 13 positions alongthe length of the exposure slit because each position is associated withan overlay pattern on a photomask. And, in block 700 of method 120,average x and y-components of PPE vectors are calculated at each of the13 slit positions for all eight wafers. The method 802 proceeds to block806 where a system of Zernike polynomial equations is setup to find theZernike coefficients describing the horizontal aspect of lens aberrationin the photolithography lens at the selected slit position. In moredetail, FIG. 14 illustrates a system of Zernike polynomial equations 808that may be used to calculate the quality of a photolithography lens interms of eight Zernike coefficients. The variables OVL_(x)(1) throughOVL_(x)(8) represent the average PPE vector x-component for each of theeight exposed wafers at a selected slit position. The variables S₇(1)through S₇(8) represent the sensitivity coefficients for the Z₇aberration pattern for each of the eight overlay patterns exposed on theeight wafers. These sensitivity coefficients were calculated by thephotolithography simulation tool 106 in block 300 of the method 120. Tofind the eight Zernike coefficients associated with the lens in thex-direction at the selected slit position, the PPE vector x-componentsfor each wafer at the selected slit position (eight values) are pluggedinto the equation as the OVL_(x)(1) through OVL_(x)(8) variables, andthe sensitivity coefficients associated with the eight overlay patternsfor each of the eight aberration patterns (64 total values) are pluggedinto the equation system 808. As a result, system 808 includes eightequations each having eight unknowns (i.e. the Zernike coefficients Z₇,z₁₀, Z₁₄, Z₁₉, Z₂₃, Z₂₆, Z₃₀). The method 802 then proceeds to block 810where the eight Zernike coefficients are solved for. The resultingZernike-coefficients describe the horizontal aspect of lens aberrationin the photolithography lens at the selected slit position. For example,the Z₇ Zernike coefficient solved for in this block represents theamount of horizontal aberration of the Z₇ aberration type exhibited bythe photolithography tool's lens at the select slit position.

The method 802 then proceeds to block 812 where a system of Zernikepolynomial equations is setup to End the Zernike coefficients describingthe vertical aspect of lens aberration in the photolithography tool'slens at the selected slit position. This system of Zernike polynomialequations is generated in the same manner as that described inassociation with block 806; however, the PPE vector y-component data forthe selected slit position is plugged into OVL_(y)(1) through OVL_(y)(8)variables (corresponding to the eight overlay patterns) on the left sideof the system 808. The same sensitivity coefficients as used in block806 are plugged into the system 808. After the system of equations forthe vertical aspect of lens aberration is generated, the method 802moves to block 814 where the eight Zernike coefficients are solved for.The resulting Zernike coefficients describe the vertical aspect of lensaberration in the photolithography lens at the selected slit position.For example, the Z₇ Zernike coefficient solved for in this blockrepresents the amount of vertical aberration of the Z₇ aberrationpattern exhibited by the photolithography tool's lens at the select slitposition.

The method 802 next moves to decision block 816 where it is determinedwhether Zernike coefficients for additional exposure slit positions needto be solved for. If so, the method proceeds to block 818 where the nextslit position is selected along the length of the exposure slit, andthen returns to block 806. if Zernike coefficients associated with everyslit position along the exposure slit (i.e., 13 positions in theillustrated embodiment), the method 802 proceeds to optional block 820where the Zernike coefficient values for each aberration pattern may beplotted for analysis purposes. In the illustrated embodiment, thesolved-for Zernike coefficients may be plotted on line graphs such, asthose illustrated in FIGS. 15 and 16. An example line graph 812illustrates the Z₇ Zernike coefficients associated with each of the 13slit positions. The triangular data points represent the Zernikecoefficients associated with the horizontal aspect of lens aberrationand the circular data points represent the Zernike coefficientsassociated with the vertical aspect of lens aberration. An example linegraph 814 is similar to the line graph 812 but illustrates the Z₁₀Zernike coefficients corresponding to each of the 13 exposure slitpositions. Line graphs for the remaining calculated Zernike coefficients(i.e. Z₁₄, Z₁₉, Z₂₃, Z₂₆, Z₃₀) may also be created for analysispurposes. In this manner, the cross-slit lens aberration of thephotolithography tool's lens for eight different aberration types may bevisualized. It is understood that the above disclosure of solving forZernike coefficients is simply an example, and alternative methods maybe utilized to transform overlay error data into meaningful lensaberration characterization data. Further, visualization means otherthan line graphs may be used to plot the Zernike coefficient data.Additionally, in some embodiments, the method 802 may include additionalsteps and/or the current steps may be performed in a different orderdepending on the manner in which lens aberration is characterized.

Referring back to FIG. 2, the method 120 next proceeds to block 900where the lens aberration characterization data may be stored in thedatabase 112 in system 102. In some embodiments, the lens aberrationdata may be used to calibrate the photolithography tool 104 so thatoverlay error is reduced. Further, aberration characteristics of aphotolithography lenses may drift over time, and thus it may be helpfulto compare current lens aberration data against historical data.Additionally, in some embodiments, the method 120 may include additionalsteps and/or the current steps may be performed in a different orderdepending on the specific manner in which lens aberration ischaracterized.

Although the method 120 of generating lens aberration characterizationdata was described in the context of a single photolithography tool, itmay be applied across a plurality of tools in a fabrication facility.And, when characterizing the quality of multiple photolithography tools,efficiencies may be achieved using the above method versus priormethods. For instance, the same set of overlay photomasks may be used toexpose test wafers on multiple tools. The resultant lens aberration datamay be compared to characterize the difference in lens quality betweenthe multiple photolithography tools. And, because the overlay photomasksof the present disclosure are include multiple-different patterns on thesame mask (i.e. Inner box and outer box having different pitches)photolithography tool time required for lens characterization isreduced. Additionally, in alternative embodiments, the method 120 inFIG. 2 may be modified to characterize only one type of aberration of aphotolithography lens, such as the aberration pattern represented by theZ₇ Zernike coefficient. In such an embodiment, only a single overlaypattern would need to be selected and simulated to find its sensitivitycoefficient associated with the aberration pattern. In turn, only asingle overlay photomask having the overlay pattern would need to becreated to expose the pattern onto a wafer. After measuring the overlayerror/relative PPE, only a single Zernike polynomial equation would beneeded to solve for a single Zernike coefficient. Further, in somealternative embodiments, photolithography lens aberration may becharacterized by means other than Zernike coefficients.

One of the broader forms of the present disclosure involves a method ofcharacterizing photolithography lens quality. The method includesselecting an overlay pattern having a first feature with a first pitchand a second feature with a second pitch different than the first pitch,performing a photolithography simulation to determine a sensitivitycoefficient associated with the overlay pattern, and providing aphotomask having the overlay pattern thereon. The method also includesexposing, with a photolithography tool, a wafer with the photomask toform the overlay pattern on the wafer, measuring a relative patternplacement error of the overlay pattern formed on the wafer, andcalculating a quality indicator for a lens in the photolithography toolusing the relative pattern placement error and the sensitivitycoefficient.

Another one of the broader forms of the present disclosure involves amethod of characterizing photolithography lens quality. The methodincludes selecting first and second different overlay patterns, each ofthe first and second overlay patterns having a first feature with afirst pitch and a second feature with a second pitch different than thefirst pitch. The method further includes performing a photolithographysimulation to determine a first sensitivity coefficient for the firstoverlay pattern and a second sensitivity coefficient for the secondoverlay pattern, the first and second sensitivity coefficients beingrespectively associated with a first lens aberration pattern representedby a first Zernike coefficient and a second lens aberration patternrepresented by a second Zernike coefficient different than the firstZernike coefficient. Additionally, the method includes providing firstand second photomasks, the first photomask having the first overlaypattern thereon and the second photomask having the second overlaypattern thereon and exposing, with a photolithography tool, first andsecond wafers with the first and second photomasks to form the firstoverlay pattern on the first wafer and the second overlay pattern on thesecond wafer. The method further includes measuring a first relativepattern placement error of the first overlay pattern formed on the firstwafer and measuring a second relative pattern placement error of thesecond overlay pattern formed on the second wafer, and, finally, solvinga system of Zernike polynomial equations using the first and secondrelative pattern placement errors and the first and second sensitivitycoefficients to determine values for the first and second Zernikecoefficients.

Yet another of the broader forms of the present disclosure involves asystem that includes a photolithography simulation tool configured todetermine a sensitivity coefficient associated with an overlay patternhaving a first feature with a first pitch and a second feature with asecond pitch different than the first pitch. The system also includes aphotolithography tool having a lens and an exposure slit, thephotolithography tool configured to direct radiation from the exposureslit through a photomask having the overlay pattern thereon and onto awafer to form the overlay pattern on the wafer. Additionally, the systemincludes an overlay metrology tool configured to measure a relativepattern placement error of the overlay pattern formed on the wafer and adata processing tool configured to calculate a quality indicator for thelens in the photolithography tool using the relative pattern placementerror and the sensitivity coefficient.

Although only a few exemplary embodiments of this invention have beendescribed in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of this invention. It is understood that various differentcombinations of the above-listed steps can be used in various sequencesor in parallel, and there is no particular step that is critical orrequired. Also, features illustrated and discussed above with respect tosome embodiments can be combined with features illustrated and discussedabove with respect to other embodiments. Accordingly, all suchmodifications are intended to be included within the scope of thisinvention.

What is claimed is:
 1. A method of characterizing photolithography lensquality, comprising: selecting first and second different overlaypatterns, each of the first and second overlay patterns having a firstfeature with a first pitch and a second feature with a second pitchdifferent than the first pitch; performing a photolithography simulationto determine a first sensitivity coefficient for the first overlaypattern and a second sensitivity coefficient for the second overlaypattern, the first and second sensitivity coefficients beingrespectively associated with a first lens aberration pattern representedby a first Zernike coefficient and a second lens aberration patternrepresented by a second Zernike coefficient different than the firstZernike coefficient; providing first and second photomasks, the firstphotomask having the first overlay pattern thereon and the secondphotomask having the second overlay pattern thereon; exposing, with aphotolithography tool, first and second wafers with the first and secondphotomasks to form the first overlay pattern on the first wafer and thesecond overlay pattern on the second wafer; measuring a first relativepattern placement error of the first overlay pattern formed on the firstwafer and measuring a second relative pattern placement error of thesecond overlay pattern formed on the second wafer; and solving a systemof Zernike polynomial equations using the first and second relativepatterns placement errors and the first and second sensitivitycoefficients to determine values for the first and second Zernikecoefficients.
 2. The method of claim 1, wherein the first feature andthe second feature on each overlay pattern have the same center point;and wherein measuring the first and second relative pattern placementerrors of the first and second overlay patterns formed on the first andsecond wafers includes measuring a displacement between a center pointof the first feature and a center point of the second feature on each ofthe first and second wafers.
 3. The method of claim 2, wherein the firstand second relative pattern placement errors are vectors havinghorizontal component values and a vertical component values.
 4. Themethod of claim 1, wherein the first sensitivity coefficient representsa ratio of an amount of pattern placement error that is produced by anamount of lens aberration associated with the first lens aberrationpattern; and wherein the second sensitivity coefficient represents aratio of an amount of pattern placement error that is produced by anamount of lens aberration associated with the second lens aberrationpattern.
 5. The method of claim 1, wherein the first photomask includesmultiple instances of the first overlay pattern arranged in a row acrossa width of the first photomask; wherein the second photomask includesmultiple instances of the second overlay pattern arranged in a rowacross a width of the second photomask; wherein the exposing includesdirecting radiation out of an exposure slit in the photolithography tooland through the first photomask to form a row of first overlay patternson the first wafer, the overlay patterns in the row of second overlaypatterns formed on the first wafer being respectively associated with aplurality of locations along a length of the exposure slit; wherein theexposing includes directing radiation out of the exposure slit in thephotolithography tool and through the second photomask to form a row ofsecond overlay patterns on the second wafer, the overlay patterns in therow of second overlay patterns formed on the second wafer beingrespectively associated with the plurality of locations along the lengthof the exposure slit; wherein the measuring includes measuring a firstrelative pattern placement error for each overlay pattern in the row offirst overlay patterns on the first wafer; and wherein the measuringincludes measuring a second relative pattern placement error for eachoverlay pattern in the row of second overlay patterns on the secondwafer.
 6. The method of claim 5, wherein the solving includes solving asystem of Zernike polynomial equations for each location in theplurality of locations along the length of the exposure slit using thefirst and second relative pattern placement errors respectivelyassociated with the plurality of locations to determine values for thefirst and second Zernike coefficients associated with each location inthe plurality of locations along the length of the exposure slit.
 7. Amethod of characterizing photolithography lens quality, comprising:selecting first and second different overlay pattern; performing aphotolithography simulation to determine a first sensitivity coefficientfor the first overlay pattern and a second sensitivity coefficient forthe second overlay pattern; providing first and second photomasks, thefirst photomask having the first overlay pattern thereon and the secondphotomask having the second overlay pattern thereon; exposing, with aphotolithography tool, first and second wafers with the first and secondphotomasks to form the first overlay pattern on the first wafer and thesecond overlay pattern on the second wafer; measuring a first relativepattern placement error of the first overlay pattern formed on the firstwafer and measuring a second relative pattern placement error of thesecond overlay pattern formed on the second wafer; and calculating aquality indicator for a lens in the photolithography tool using thefirst and second relative pattern placement errors and the first andsecond sensitivity coefficients.
 8. The method of claim 7, wherein eachof the first and second overlay patterns has a first feature with afirst pitch and a second feature with a second pitch different than thefirst pitch; wherein the first feature and the second feature on eachoverlay pattern have the same center point; and wherein measuring thefirst and second relative pattern placement errors of the first andsecond overlay patterns formed on the first and second wafers includesmeasuring a displacement between a center point of the first feature anda center point of the second feature on each of the first and secondwafers.
 9. The method of claim 8, where each of the first and secondoverlay patterns is one of a box-in-box pattern and an alternating barpattern.
 10. The method of claim 8, wherein each of the first and secondrelative pattern placement errors is a vector having a horizontalcomponent value and a vertical component value.
 11. The method of claim7, wherein the first sensitivity coefficient represents a ratio of anamount of pattern placement error that is produced by an amount of lensaberration associated with the first lens aberration pattern; andwherein the second sensitivity coefficient represents a ratio of anamount of pattern placement error that is produced by an amount of lensaberration associated with the second lens aberration pattern.
 12. Themethod of claim 7, wherein the exposing includes exposing the firstwafer a plurality of times to form the first overlay pattern in aplurality of fields on the first wafer; wherein the measuring includesmeasuring the first relative pattern placement error of each firstoverlay pattern in the plurality of fields on the first wafer; andwherein the calculating the quality indicator includes: averaging thefirst relative pattern placement errors of the first overlay patterns tofind an average first relative pattern placement error for the firstwafer; and calculating the quality indicator of the lens in thephotolithography tool using the average first relative pattern placementerror and the first sensitivity coefficient.
 13. The method of claim 7,wherein the first photomask includes multiple instances of the firstoverlay pattern that are arranged in a row across a width of the firstphotomask; wherein the exposing includes directing radiation out of anexposure slit in the photolithography tool and through the firstphotomask to form a row of first overlay patterns on the first wafer,each first overlay pattern in the row of first overlay patterns formedon the first wafer being associated with a location along a length ofthe exposure slit; and wherein the measuring includes measuring a firstrelative pattern placement error for each first overlay pattern in therow of first overlay patterns on the first wafer.
 14. The method ofclaim 13, wherein the calculating a quality indicator includescalculating a quality indicator of the lens in the photolithography toolat a plurality of locations on the lens that correspond to locationsalong the length of the exposure slit using the first relative patternplacement errors of the first overlay patterns in the row of firstoverlay patterns formed on the first wafer.
 15. The method of claim 7,wherein the calculating a quality indicator includes decomposing thefirst relative pattern placement error into horizontal and verticalcomponents and calculating a horizontal quality indicator using thehorizontal component and calculating a vertical quality indicator usingthe vertical component.
 16. The method of claim 7, wherein calculating aquality indicator includes solving a system of Zernike polynomialequations using the first and second relative pattern placement errorsand the first and second sensitivity coefficients to determine valuesfor the first and second Zernike coefficients.
 17. The method of claim7, further including comparing the quality indicator against ahistorical quality indicator of the lens to monitor lens quality drift.18. A system, comprising: photolithography simulation tool configured todetermine a first sensitivity coefficient for a first overlay patternand a second sensitivity coefficient for a second overlay pattern; aphotolithography tool having a lens and an exposure slit, thephotolithography tool configured to direct radiation from the exposureslit through a first photomask having the first overlay pattern thereonand onto a first wafer to form the first overlay pattern on the firstwafer, the photolithography tool also configured to direct radiationfrom the exposure slit through a second photomask having the secondoverlay pattern thereon and onto a second wafer to form the secondoverlay pattern on the second wafer; an overlay metrology toolconfigured to measure a first relative pattern placement error of thefirst overlay pattern formed on the first wafer and configured tomeasure a second relative pattern placement error of the second overlaypattern formed on the second wafer; and a data processing toolconfigured to calculate a quality indicator for the lens in thephotolithography tool using the first and second relative patternplacement errors and the first and second sensitivity coefficients. 19.The system of claim 18, wherein each of the first and second overlaypatterns has a first feature with a first pitch and a second featurewith a second pitch different than the first pitch; wherein the firstfeature and the second feature on each overlay pattern have the samecenter point; and wherein the overlay metrology tool is furtherconfigured to measure a displacement between a center point of the firstfeature and a center point of the second feature on each of the firstand second wafers.
 20. The system of claim 18, wherein the dataprocessing tool is configured to apply the first and second relativepattern placement errors and the first and second sensitivitycoefficients to a system of Zernike polynomial equations to solve forfirst and second Zernike coefficients, the Zernike coefficients beingthe quality indicator.